Part Details for IXFT30N50P by IXYS Corporation
Overview of IXFT30N50P by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IXFT30N50P
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
747-IXFT30N50P
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Mouser Electronics | MOSFET 500V 30A RoHS: Compliant | 0 |
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$12.3200 | Order Now |
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Bristol Electronics | 117 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 500V, 0.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-268AA | 93 |
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$13.3350 / $17.1450 | Buy Now |
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DISTI #
IXFT30N50P
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TTI | MOSFET 500V 30A Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$11.4400 / $12.0200 | Buy Now |
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DISTI #
IXFT30N50P
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TME | Transistor: N-MOSFET, unipolar, 500V, 30A, 460W, TO268 Min Qty: 1 | 0 |
|
$12.1800 / $17.0300 | RFQ |
Part Details for IXFT30N50P
IXFT30N50P CAD Models
IXFT30N50P Part Data Attributes:
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IXFT30N50P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFT30N50P
IXYS Corporation
Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-268AA | |
| Package Description | TO-268, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-268AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 75 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFT30N50P
This table gives cross-reference parts and alternative options found for IXFT30N50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFT30N50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTT30N50P | Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXFT30N50P vs IXTT30N50P |
| IXFT30N50P | Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXFT30N50P vs IXFT30N50P |
| IXFV30N50PS | Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN | IXYS Corporation | IXFT30N50P vs IXFV30N50PS |
| IXTT30N50P | Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXFT30N50P vs IXTT30N50P |
| IXTV30N50PS | Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN | IXYS Corporation | IXFT30N50P vs IXTV30N50PS |