Part Details for IXFT69N30P by IXYS Corporation
Overview of IXFT69N30P by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFT69N30P
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
747-IXFT69N30P
|
Mouser Electronics | MOSFET 69 Amps 300V 0.049 Rds | 0 |
|
$9.1500 | Order Now |
|
DISTI #
IXFT69N30P
|
TTI | MOSFET 69 Amps 300V 0.049 Rds Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
|
$7.9100 | Buy Now |
|
DISTI #
IXFT69N30P
|
TME | Transistor: N-MOSFET, unipolar, 300V, 69A, 500W, TO268, 100ns Min Qty: 1 | 0 |
|
$9.1100 / $12.6800 | RFQ |
|
|
New Advantage Corporation | MOSFET DIS.69A 300V N-CH TO268(D2PAK) HIPERFET RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 24 |
|
$17.2600 / $18.4900 | Buy Now |
Part Details for IXFT69N30P
IXFT69N30P CAD Models
IXFT69N30P Part Data Attributes:
|
|
IXFT69N30P
IXYS Corporation
Buy Now
Datasheet
|
Compare Parts:
IXFT69N30P
IXYS Corporation
Power Field-Effect Transistor, 69A I(D), 300V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-268AA | |
| Package Description | TO-268, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 300 V | |
| Drain Current-Max (ID) | 69 A | |
| Drain-source On Resistance-Max | 0.049 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-268AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 500 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFT69N30P
This table gives cross-reference parts and alternative options found for IXFT69N30P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFT69N30P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFT69N30P | Power Field-Effect Transistor, 69A I(D), 300V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXFT69N30P vs IXFT69N30P |
| IXFH69N30P | Power Field-Effect Transistor, 69A I(D), 300V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | IXFT69N30P vs IXFH69N30P |
| IXTQ64N28T | Power Field-Effect Transistor, 64A I(D), 280V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Littelfuse Inc | IXFT69N30P vs IXTQ64N28T |
| IXTQ64N28T | Power Field-Effect Transistor, 64A I(D), 280V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IXYS Corporation | IXFT69N30P vs IXTQ64N28T |
| IXTT69N30P | Power Field-Effect Transistor, 69A I(D), 300V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXFT69N30P vs IXTT69N30P |
| IXFK69N30P | Power Field-Effect Transistor, 69A I(D), 300V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | Littelfuse Inc | IXFT69N30P vs IXFK69N30P |
| IXTT69N30P | Power Field-Effect Transistor, 69A I(D), 300V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXFT69N30P vs IXTT69N30P |
| IXFK69N30P | Power Field-Effect Transistor, 69A I(D), 300V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | IXYS Corporation | IXFT69N30P vs IXFK69N30P |