Datasheets
IXFT78N60X3HV by: Littelfuse Inc

Power Field-Effect Transistor, 78A I(D), 600V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268HV, 2 PIN

Part Details for IXFT78N60X3HV by Littelfuse Inc

Overview of IXFT78N60X3HV by Littelfuse Inc

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for IXFT78N60X3HV

Part # Distributor Description Stock Price Buy
DISTI # 51AK3536
Newark Mosfet, N-Ch, 600V, 78A, To-268Hv Rohs Compliant: Yes |Littelfuse IXFT78N60X3HV Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $12.8600
  • 5 $12.3400
  • 10 $11.8200
  • 25 $10.9000
  • 100 $9.9800
  • 500 $8.8800
  • 1,000 $8.1500
$8.1500 / $12.8600 Buy Now
DISTI # 3996611
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $14.3769
  • 5 $13.2467
  • 10 $12.5055
  • 50 $11.5368
  • 100 $11.0671
  • 250 $10.3258
$10.3258 / $14.3769 Buy Now
DISTI # 3996611
Farnell   RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $13.9491
  • 5 $13.2872
  • 10 $12.5005
  • 50 $11.4390
  • 100 $10.3650
  • 250 $10.3276
$10.3276 / $13.9491 Buy Now

Part Details for IXFT78N60X3HV

IXFT78N60X3HV CAD Models

IXFT78N60X3HV Part Data Attributes

IXFT78N60X3HV Littelfuse Inc
Buy Now Datasheet
Compare Parts:
IXFT78N60X3HV Littelfuse Inc Power Field-Effect Transistor, 78A I(D), 600V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268HV, 2 PIN
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Package Description TO-268HV, 2 PIN
Reach Compliance Code unknown
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 2200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 78 A
Drain-source On Resistance-Max 0.038 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 36 pF
JEDEC-95 Code TO-268AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 780 W
Pulsed Drain Current-Max (IDM) 120 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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