Datasheets
IXFV18N60PS by: IXYS Corporation

Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN

Part Details for IXFV18N60PS by IXYS Corporation

Overview of IXFV18N60PS by IXYS Corporation

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Applications Energy and Power Systems Renewable Energy

Price & Stock for IXFV18N60PS

Part # Distributor Description Stock Price Buy
DISTI # 1427346
element14 Asia-Pacific MOSFET, N, SMD, PLUS220 RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $3.5374
  • 10 $3.0090
  • 100 $2.6347
  • 500 $2.4585
  • 1,000 $2.2237
$2.2237 / $3.5374 Buy Now
DISTI # 1427346
Farnell MOSFET, N, SMD, PLUS220 RoHS: Compliant Min Qty: 1 Lead time: 17 Weeks, 1 Days Container: Each 0
  • 1 $1.9606
$1.9606 Buy Now

Part Details for IXFV18N60PS

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IXFV18N60PS Part Data Attributes

IXFV18N60PS IXYS Corporation
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IXFV18N60PS IXYS Corporation Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer IXYS CORP
Package Description PLUS220SMD, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 45 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFV18N60PS

This table gives cross-reference parts and alternative options found for IXFV18N60PS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFV18N60PS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTQ18N60P Power Field-Effect Transistor, 18A I(D), 600V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Littelfuse Inc IXFV18N60PS vs IXTQ18N60P
IXTT18N60P Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation IXFV18N60PS vs IXTT18N60P
IXTT18N60P Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Littelfuse Inc IXFV18N60PS vs IXTT18N60P
IXFV18N60P Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220, 3 PIN IXYS Corporation IXFV18N60PS vs IXFV18N60P
IXFH18N60P Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IXFV18N60PS vs IXFH18N60P
IXTV18N60PS Power Field-Effect Transistor, 18A I(D), 600V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN IXYS Corporation IXFV18N60PS vs IXTV18N60PS

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