Part Details for IXFV22N60PS by IXYS Corporation
Overview of IXFV22N60PS by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for IXFV22N60PS
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 80 |
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$4.4585 / $7.2300 | Buy Now |
Part Details for IXFV22N60PS
IXFV22N60PS CAD Models
IXFV22N60PS Part Data Attributes
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IXFV22N60PS
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFV22N60PS
IXYS Corporation
Power Field-Effect Transistor, 22A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | PLUS220SMD, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 22 A | |
| Drain-source On Resistance-Max | 0.35 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 66 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFV22N60PS
This table gives cross-reference parts and alternative options found for IXFV22N60PS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFV22N60PS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFT23N60Q | Power Field-Effect Transistor, 23A I(D), 600V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | IXYS Corporation | IXFV22N60PS vs IXFT23N60Q |
| IXTQ22N60P | Power Field-Effect Transistor, 22A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IXYS Corporation | IXFV22N60PS vs IXTQ22N60P |
| IXFQ26N60P | Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Littelfuse Inc | IXFV22N60PS vs IXFQ26N60P |
| SHD2394FS | Power Field-Effect Transistor, 20A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-6, 3 PIN | Sensitron Semiconductors | IXFV22N60PS vs SHD2394FS |
| SHD239607 | Power Field-Effect Transistor, 20A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-6, 3 PIN | Sensitron Semiconductors | IXFV22N60PS vs SHD239607 |
| IXFH26N60P | Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | Littelfuse Inc | IXFV22N60PS vs IXFH26N60P |
| IXTQ26N60P | Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Littelfuse Inc | IXFV22N60PS vs IXTQ26N60P |
| IXFQ22N60P3 | Power Field-Effect Transistor, | Littelfuse Inc | IXFV22N60PS vs IXFQ22N60P3 |
| IXFT22N60P | Power Field-Effect Transistor, 22A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXFV22N60PS vs IXFT22N60P |
| IXTT22N60P | Power Field-Effect Transistor, 22A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXFV22N60PS vs IXTT22N60P |