Part Details for IXFX150N30P3 by IXYS Corporation
Overview of IXFX150N30P3 by IXYS Corporation
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IXFX150N30P3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IXFX150N30P3-ND
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DigiKey | MOSFET N-CH 300V 150A PLUS247-3 Min Qty: 1 Lead time: 44 Weeks Container: Tube |
7 In Stock |
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$13.7629 / $20.7500 | Buy Now |
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DISTI #
747-IXFX150N30P3
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Mouser Electronics | MOSFET N-Channel: Power MOSFET w/Fast Diode RoHS: Compliant | 0 |
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$18.4400 / $20.7500 | Order Now |
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Future Electronics | MOSFET DISCRETE RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube | 0Tube |
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$15.8200 / $16.1300 | Buy Now |
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DISTI #
IXFX150N30P3
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TTI | MOSFET N-Channel: Power MOSFET w/Fast Diode Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$14.4200 | Buy Now |
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DISTI #
IXFX150N30P3
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TME | Transistor: N-MOSFET, unipolar, 300V, 150A, 1300W, PLUS247™ Min Qty: 1 | 0 |
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$16.5200 / $23.1700 | RFQ |
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Ameya Holding Limited | Min Qty: 8 | 26 |
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$24.0247 / $24.7696 | Buy Now |
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Chip1Cloud | MOSFET N-CH 300V 150A PLUS247-3 | 2180 |
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RFQ | |
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New Advantage Corporation | MOSFET DIS.150A 300V N-CH TO247AD POLAR3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 24 |
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$31.3000 / $33.5400 | Buy Now |
Part Details for IXFX150N30P3
IXFX150N30P3 CAD Models
IXFX150N30P3 Part Data Attributes:
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IXFX150N30P3
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFX150N30P3
IXYS Corporation
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 4000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 300 V | |
| Drain Current-Max (ID) | 150 A | |
| Drain-source On Resistance-Max | 0.019 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 40 pF | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1300 W | |
| Pulsed Drain Current-Max (IDM) | 375 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |