Part Details for IXFX20N120P by Littelfuse Inc
Overview of IXFX20N120P by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFX20N120P
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0984
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Newark | Discmosfetn-Ch Hiperfet-Polar To-247Ad/ Tube |Littelfuse IXFX20N120P Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$17.7900 | Buy Now |
DISTI #
IXFX20N120P-ND
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DigiKey | MOSFET N-CH 1200V 20A PLUS247-3 Min Qty: 1 Lead time: 57 Weeks Container: Tube |
240 In Stock |
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$17.5547 / $26.4700 | Buy Now |
Part Details for IXFX20N120P
IXFX20N120P CAD Models
IXFX20N120P Part Data Attributes
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IXFX20N120P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFX20N120P
Littelfuse Inc
Power Field-Effect Transistor, 20A I(D), 1200V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | IN-LINE, R-PSIP-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1000 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.57 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 780 W | |
Pulsed Drain Current-Max (IDM) | 50 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXFX20N120P
This table gives cross-reference parts and alternative options found for IXFX20N120P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFX20N120P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
APT12057LLLG | Power Field-Effect Transistor, 22A I(D), 1200V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN | Microsemi Corporation | IXFX20N120P vs APT12057LLLG |
APT12060LVFRG | Power Field-Effect Transistor, 20A I(D), 1200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | Microchip Technology Inc | IXFX20N120P vs APT12060LVFRG |
IXFN22N120 | Power Field-Effect Transistor, 22A I(D), 1200V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | Littelfuse Inc | IXFX20N120P vs IXFN22N120 |
IXFN22N120 | Power Field-Effect Transistor, 22A I(D), 1200V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFX20N120P vs IXFN22N120 |
IXFX20N120P | Power Field-Effect Transistor, 20A I(D), 1200V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3 | IXYS Corporation | IXFX20N120P vs IXFX20N120P |
IXFK20N120P | Power Field-Effect Transistor, 20A I(D), 1200V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Littelfuse Inc | IXFX20N120P vs IXFK20N120P |
APT12057B2LLG | Power Field-Effect Transistor, 22A I(D), 1200V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFX20N120P vs APT12057B2LLG |
APT12057LLL | Power Field-Effect Transistor, 22A I(D), 1200V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Advanced Power Technology | IXFX20N120P vs APT12057LLL |
APT12060B2VR | Power Field-Effect Transistor, 20A I(D), 1200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 | Advanced Power Technology | IXFX20N120P vs APT12060B2VR |
APT12060LVR | Power Field-Effect Transistor, 20A I(D), 1200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Advanced Power Technology | IXFX20N120P vs APT12060LVR |