Part Details for IXFX24N100 by IXYS Corporation
Overview of IXFX24N100 by IXYS Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for IXFX24N100
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFX24N100-ND
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DigiKey | MOSFET N-CH 1000V 24A PLUS 247 Min Qty: 30 Lead time: 98 Weeks Container: Tube | Limited Supply - Call |
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$16.4833 | Buy Now |
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DISTI #
747-IXFX24N100
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Mouser Electronics | MOSFET 24 Amps 1000V 0.39 Rds RoHS: Compliant | 0 |
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Order Now |
Part Details for IXFX24N100
IXFX24N100 CAD Models
IXFX24N100 Part Data Attributes
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IXFX24N100
IXYS Corporation
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Datasheet
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Compare Parts:
IXFX24N100
IXYS Corporation
Power Field-Effect Transistor, 24A I(D), 1000V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | PLUS247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 24 A | |
| Drain-source On Resistance-Max | 0.39 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 560 W | |
| Pulsed Drain Current-Max (IDM) | 96 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFX24N100
This table gives cross-reference parts and alternative options found for IXFX24N100. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFX24N100, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT10045LFLLG | Power Field-Effect Transistor, 23A I(D), 1000V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | Microchip Technology Inc | IXFX24N100 vs APT10045LFLLG |
| IXTX24N100 | Power Field-Effect Transistor, 24A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | IXYS Corporation | IXFX24N100 vs IXTX24N100 |
| IXFX24N100Q3 | Power Field-Effect Transistor, 24A I(D), 1000V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | IXYS Corporation | IXFX24N100 vs IXFX24N100Q3 |
| IXFK24N100Q3 | Power Field-Effect Transistor, 24A I(D), 1000V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | IXYS Corporation | IXFX24N100 vs IXFK24N100Q3 |
| APT10045B2LL | Power Field-Effect Transistor, 23A I(D), 1000V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFX24N100 vs APT10045B2LL |
| APT10045B2LLG | Power Field-Effect Transistor, 23A I(D), 1000V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFX24N100 vs APT10045B2LLG |
| IXFX24N100F | Power Field-Effect Transistor, 24A I(D), 1000V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | IXYS Corporation | IXFX24N100 vs IXFX24N100F |
| IXFK24N100Q3 | Power Field-Effect Transistor, | Littelfuse Inc | IXFX24N100 vs IXFK24N100Q3 |
| APT10045B2FLLG | Power Field-Effect Transistor, 23A I(D), 1000V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFX24N100 vs APT10045B2FLLG |