Datasheets
IXFX360N15T2 by:

Power Field-Effect Transistor, 360A I(D), 150V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN

Part Details for IXFX360N15T2 by IXYS Corporation

Overview of IXFX360N15T2 by IXYS Corporation

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Price & Stock for IXFX360N15T2

Part # Distributor Description Stock Price Buy
DISTI # 747-IXFX360N15T2
Mouser Electronics MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET RoHS: Compliant 0
  • 1 $30.6900
  • 10 $30.6800
$30.6800 / $30.6900 Order Now
Future Electronics 150V 360A 0.004 Ohm N-Ch PLUS247 HiperFET RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $23.8500
  • 60 $23.7000
  • 90 $23.6200
  • 120 $23.5600
  • 150 $23.3800
$23.3800 / $23.8500 Buy Now
Bristol Electronics   89
RFQ
DISTI # IXFX360N15T2
TTI MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $26.2300
$26.2300 Buy Now
DISTI # IXFX360N15T2
TME Transistor: N-MOSFET, GigaMOS™, unipolar, 150V, 360A, 1670W, 150ns Min Qty: 1 0
  • 1 $34.2700
  • 3 $30.8400
  • 10 $27.4000
  • 30 $24.5000
$24.5000 / $34.2700 RFQ
New Advantage Corporation MOSFET DIS.360A 150V N-CH PLUS247 TRENCHT2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 23
  • 7 $49.7300
  • 23 $46.4100
$46.4100 / $49.7300 Buy Now

Part Details for IXFX360N15T2

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IXFX360N15T2 Part Data Attributes:

IXFX360N15T2 IXYS Corporation
Buy Now Datasheet
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IXFX360N15T2 IXYS Corporation Power Field-Effect Transistor, 360A I(D), 150V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description PLASTIC, PLUS247, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 360 A
Drain-source On Resistance-Max 0.004 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1670 W
Pulsed Drain Current-Max (IDM) 900 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFX360N15T2

This table gives cross-reference parts and alternative options found for IXFX360N15T2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFX360N15T2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFK360N15T2 Power Field-Effect Transistor, Littelfuse Inc IXFX360N15T2 vs IXFK360N15T2
IXFK360N15T2 Power Field-Effect Transistor, 360A I(D), 150V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN IXYS Corporation IXFX360N15T2 vs IXFK360N15T2

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