Part Details for IXFX360N15T2 by IXYS Corporation
Overview of IXFX360N15T2 by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFX360N15T2
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXFX360N15T2
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Mouser Electronics | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET RoHS: Compliant | 0 |
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$30.6800 / $30.6900 | Order Now |
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Future Electronics | 150V 360A 0.004 Ohm N-Ch PLUS247 HiperFET RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube | 0Tube |
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$23.3800 / $23.8500 | Buy Now |
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Bristol Electronics | 89 |
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RFQ | ||
DISTI #
IXFX360N15T2
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TTI | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$26.2300 | Buy Now |
DISTI #
IXFX360N15T2
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TME | Transistor: N-MOSFET, GigaMOS™, unipolar, 150V, 360A, 1670W, 150ns Min Qty: 1 | 0 |
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$24.5000 / $34.2700 | RFQ |
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New Advantage Corporation | MOSFET DIS.360A 150V N-CH PLUS247 TRENCHT2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 23 |
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$46.4100 / $49.7300 | Buy Now |
Part Details for IXFX360N15T2
IXFX360N15T2 CAD Models
IXFX360N15T2 Part Data Attributes:
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IXFX360N15T2
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFX360N15T2
IXYS Corporation
Power Field-Effect Transistor, 360A I(D), 150V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Package Description | PLASTIC, PLUS247, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 360 A | |
Drain-source On Resistance-Max | 0.004 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1670 W | |
Pulsed Drain Current-Max (IDM) | 900 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXFX360N15T2
This table gives cross-reference parts and alternative options found for IXFX360N15T2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFX360N15T2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXFK360N15T2 | Power Field-Effect Transistor, | Littelfuse Inc | IXFX360N15T2 vs IXFK360N15T2 |
IXFK360N15T2 | Power Field-Effect Transistor, 360A I(D), 150V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN | IXYS Corporation | IXFX360N15T2 vs IXFK360N15T2 |