IXFY30N25X3
Description: Power Field-Effect Transistor,

Overview of IXFY30N25X3 by Littelfuse Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 2 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for IXFY30N25X3 by Littelfuse Inc

Part # Manufacturer Description Stock Price Buy
DISTI # 03AH1031
Newark Mosfet, N-Ch, 250V, 30A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:30A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Littelfuse IXFY30N25X3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 25
  • 1 $6.3100
  • 25 $5.6800
  • 100 $5.0400
  • 250 $4.5100
  • 500 $4.2400
  • 1,000 $3.9800
  • 2,500 $3.3600
$3.3600 / $6.3100 Buy Now
DISTI # IXFY30N25X3-ND
DigiKey MOSFET N-CH 250V 30A TO252AA Min Qty: 1 Lead time: 32 Weeks Container: Tube 6032
In Stock
  • 1 $6.4400
  • 70 $5.1429
  • 140 $4.6016
  • 560 $4.0602
  • 1,050 $3.6542
  • 2,030 $3.4241
$3.4241 / $6.4400 Buy Now

CAD Models for IXFY30N25X3 by Littelfuse Inc
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Part Data Attributes for IXFY30N25X3 by Littelfuse Inc

IXFY30N25X3
Littelfuse Inc
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
LITTELFUSE INC
Package Description
,
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
LITTELFUSE
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
300 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
250 V
Drain Current-Max (ID)
30 A
Drain-source On Resistance-Max
0.06 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
1 pF
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
170 W
Pulsed Drain Current-Max (IDM)
45 A
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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