Part Details for IXGA20N120 by Littelfuse Inc
Overview of IXGA20N120 by Littelfuse Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Part Details for IXGA20N120
IXGA20N120 CAD Models
IXGA20N120 Part Data Attributes
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IXGA20N120
Littelfuse Inc
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Datasheet
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IXGA20N120
Littelfuse Inc
Insulated Gate Bipolar Transistor,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 40 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 700 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 1500 ns | |
| Turn-off Time-Nom (toff) | 780 ns | |
| Turn-on Time-Nom (ton) | 48 ns | |
| VCEsat-Max | 2.5 V |
Alternate Parts for IXGA20N120
This table gives cross-reference parts and alternative options found for IXGA20N120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXGA20N120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT35GN120SG | Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | IXGA20N120 vs APT35GN120SG |
| IRGBC40U | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IXGA20N120 vs IRGBC40U |
| IXGH22N50B | Insulated Gate Bipolar Transistor, 44A I(C), 500V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXGA20N120 vs IXGH22N50B |
| HGTP12N60D1 | Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | IXGA20N120 vs HGTP12N60D1 |
| HGTG30N60C3 | Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 | Fairchild Semiconductor Corporation | IXGA20N120 vs HGTG30N60C3 |
| HGTP12N60A4 | Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB ALTERNATE VERSION, 3 PIN | Fairchild Semiconductor Corporation | IXGA20N120 vs HGTP12N60A4 |
| IRG4IBC10UDPBF | Insulated Gate Bipolar Transistor, 6.8A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, FULL PACK-3 | Infineon Technologies AG | IXGA20N120 vs IRG4IBC10UDPBF |
| IXGH17N100 | Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXGA20N120 vs IXGH17N100 |
| APT30GT60BRD | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN | Advanced Power Technology | IXGA20N120 vs APT30GT60BRD |
| IRG4BC30SPBF | Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IXGA20N120 vs IRG4BC30SPBF |