Part Details for IXGH25N100AU1 by IXYS Corporation
Overview of IXGH25N100AU1 by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXGH25N100AU1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXGH25N100AU1
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Mouser Electronics | IGBT Transistors 1000V 50A | 0 |
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Part Details for IXGH25N100AU1
IXGH25N100AU1 CAD Models
IXGH25N100AU1 Part Data Attributes
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IXGH25N100AU1
IXYS Corporation
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Datasheet
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IXGH25N100AU1
IXYS Corporation
Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | TO-247AD, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH SPEED | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 50 A | |
| Collector-Emitter Voltage-Max | 1000 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 800 ns | |
| Gate-Emitter Thr Voltage-Max | 5.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 720 ns | |
| Turn-on Time-Nom (ton) | 100 ns |
Alternate Parts for IXGH25N100AU1
This table gives cross-reference parts and alternative options found for IXGH25N100AU1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXGH25N100AU1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXXH50N60B3D1 | Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXGH25N100AU1 vs IXXH50N60B3D1 |
| IXGT15N120C | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, D3PAK-3 | IXYS Corporation | IXGH25N100AU1 vs IXGT15N120C |
| IXGH36N60B3 | Insulated Gate Bipolar Transistor, 92A I(C), 600V V(BR)CES, N-Channel, | IXYS Corporation | IXGH25N100AU1 vs IXGH36N60B3 |
| IXGH12N100U1 | Insulated Gate Bipolar Transistor, 20A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXGH25N100AU1 vs IXGH12N100U1 |
| IXGA20N100 | Insulated Gate Bipolar Transistor, 40A I(C), 1000V V(BR)CES, N-Channel, TO-263AA, TO-263AA, 3 PIN | IXYS Corporation | IXGH25N100AU1 vs IXGA20N100 |
| IXGP15N100C | Insulated Gate Bipolar Transistor, 30A I(C), 1000V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | IXYS Corporation | IXGH25N100AU1 vs IXGP15N100C |
| IXGP4N100 | Insulated Gate Bipolar Transistor, 8A I(C), 1000V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | IXYS Corporation | IXGH25N100AU1 vs IXGP4N100 |
| IXGA20N120 | Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, TO-263AA, 3 PIN | IXYS Corporation | IXGH25N100AU1 vs IXGA20N120 |
| IXGH56N60B3 | Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, TO-247AD, PLASTIC, TO-247, 3 PIN | IXYS Corporation | IXGH25N100AU1 vs IXGH56N60B3 |
| IXGH48N60B3 | Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN | IXYS Corporation | IXGH25N100AU1 vs IXGH48N60B3 |