Part Details for IXGH32N60AU1 by IXYS Corporation
Overview of IXGH32N60AU1 by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXGH32N60AU1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 70 |
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RFQ |
Part Details for IXGH32N60AU1
IXGH32N60AU1 CAD Models
IXGH32N60AU1 Part Data Attributes
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IXGH32N60AU1
IXYS Corporation
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Datasheet
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IXGH32N60AU1
IXYS Corporation
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | FAST | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 60 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 175 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 200 W | |
| Power Dissipation-Max (Abs) | 200 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 400 ns | |
| Turn-on Time-Nom (ton) | 60 ns | |
| VCEsat-Max | 2.9 V |
Alternate Parts for IXGH32N60AU1
This table gives cross-reference parts and alternative options found for IXGH32N60AU1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXGH32N60AU1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGTP20N60C3R | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Harris Semiconductor | IXGH32N60AU1 vs HGTP20N60C3R |
| SGW6N60UFD | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, D2PAK-3 | Samsung Semiconductor | IXGH32N60AU1 vs SGW6N60UFD |
| SGP5N60RUFD | Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN | Samsung Semiconductor | IXGH32N60AU1 vs SGP5N60RUFD |
| HGT1S12N60B3S9A | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | IXGH32N60AU1 vs HGT1S12N60B3S9A |
| HGT1S3N60B3S | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | IXGH32N60AU1 vs HGT1S3N60B3S |
| APT45GL100BN | 45A, 1000V, N-CHANNEL IGBT, TO-247 | Microsemi Corporation | IXGH32N60AU1 vs APT45GL100BN |
| IXDA20N120AS | Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 | IXYS Corporation | IXGH32N60AU1 vs IXDA20N120AS |
| SGW15N120 | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN | Infineon Technologies AG | IXGH32N60AU1 vs SGW15N120 |
| HGTG18N120BN_NL | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247 | Fairchild Semiconductor Corporation | IXGH32N60AU1 vs HGTG18N120BN_NL |
| IXSH30N60B | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXGH32N60AU1 vs IXSH30N60B |