Part Details for IXGH35N120B by IXYS Corporation
Overview of IXGH35N120B by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for IXGH35N120B
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXGH35N120B
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Mouser Electronics | IGBT Transistors 70 Amps 1200V 3.3 Rds RoHS: Compliant | 0 |
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Order Now | |
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Onlinecomponents.com | Trans IGBT Chip N-CH 1.2KV 70A 3-Pin(3+Tab) TO-247AD RoHS: Compliant |
170 In Stock |
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$11.6600 / $46.6100 | Buy Now |
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Chip1Cloud | IGBT 1200V 70A 300W TO247 | 5000 |
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RFQ | |
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New Advantage Corporation | IGBT DIS.SINGLE 35A 1200V H.FAST TO247-3 RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 1768 |
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$4.1600 / $4.4600 | Buy Now |
Part Details for IXGH35N120B
IXGH35N120B CAD Models
IXGH35N120B Part Data Attributes:
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IXGH35N120B
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXGH35N120B
IXYS Corporation
Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW SATURATION VOLTAGE, LOW SWITCHING LOSSES | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 70 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 660 ns | |
| Turn-on Time-Nom (ton) | 86 ns |
Alternate Parts for IXGH35N120B
This table gives cross-reference parts and alternative options found for IXGH35N120B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXGH35N120B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT35GN120SG | Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | IXGH35N120B vs APT35GN120SG |
| IRGBC40U | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IXGH35N120B vs IRGBC40U |
| HGTP12N60D1 | Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | IXGH35N120B vs HGTP12N60D1 |
| HGTG30N60C3 | Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 | Fairchild Semiconductor Corporation | IXGH35N120B vs HGTG30N60C3 |
| IRGBC40K | Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IXGH35N120B vs IRGBC40K |
| HGT1S12N60B3 | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA, PLASTIC PACKAGE-3 | Harris Semiconductor | IXGH35N120B vs HGT1S12N60B3 |
| SGP13N60UF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IXGH35N120B vs SGP13N60UF |
| 1MB20D-060 | Insulated Gate Bipolar Transistor, 38A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | Fuji Electric Co Ltd | IXGH35N120B vs 1MB20D-060 |
| IRG4BC20UPBF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | IXGH35N120B vs IRG4BC20UPBF |
| GT50J121 | TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, 2-21F2C-3, Insulated Gate BIP Transistor | Toshiba America Electronic Components | IXGH35N120B vs GT50J121 |