Part Details for IXGH48N60A3 by Littelfuse Inc
Overview of IXGH48N60A3 by Littelfuse Inc
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- Number of Functional Equivalents:
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Price & Stock for IXGH48N60A3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH1095
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Newark | Transistor, Igbt, 600V, 120A, To-247, Continuous Collector Current:120A, Collector Emitter Saturation Voltage:1.18V, Power Dissipation:300W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C Rohs Compliant: Yes |Littelfuse IXGH48N60A3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 295 |
|
$3.4000 | Buy Now |
|
DISTI #
3949075
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element14 Asia-Pacific | TRANSISTOR, IGBT, 600V, 120A, TO-247 RoHS: Compliant Min Qty: 1 Container: Each | 295 |
|
$3.8089 / $7.1334 | Buy Now |
|
DISTI #
3949075
|
Farnell | TRANSISTOR, IGBT, 600V, 120A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 124 Weeks, 4 Days Container: Each | 295 |
|
$4.0086 / $7.5552 | Buy Now |
Part Details for IXGH48N60A3
IXGH48N60A3 CAD Models
IXGH48N60A3 Part Data Attributes
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IXGH48N60A3
Littelfuse Inc
Buy Now
Datasheet
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IXGH48N60A3
Littelfuse Inc
Insulated Gate Bipolar Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 120 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 5.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 925 ns | |
| Turn-on Time-Nom (ton) | 54 ns | |
| VCEsat-Max | 1.35 V |