Part Details for IXGH48N60B3C1 by IXYS Corporation
Overview of IXGH48N60B3C1 by IXYS Corporation
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Price & Stock for IXGH48N60B3C1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXGH48N60B3C1
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TME | Transistor: IGBT, GenX3™, 600V, 48A, 300W, TO247-3 Min Qty: 1 | 29 |
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$19.8700 | Buy Now |
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DISTI #
1829733
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Farnell | IGBT,600V,48A,TO-247 RoHS: Compliant Min Qty: 1 Lead time: 10 Weeks, 0 Days Container: Each | 0 |
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$20.0884 / $39.2528 | Buy Now |
Part Details for IXGH48N60B3C1
IXGH48N60B3C1 CAD Models
IXGH48N60B3C1 Part Data Attributes
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IXGH48N60B3C1
IXYS Corporation
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Datasheet
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IXGH48N60B3C1
IXYS Corporation
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 75 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 200 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 347 ns | |
| Turn-on Time-Nom (ton) | 48 ns |