Part Details for IXGH48N60B3D1 by Littelfuse Inc
Overview of IXGH48N60B3D1 by Littelfuse Inc
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IXGH48N60B3D1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH1099
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Newark | Transistor, Igbt, 600V, 48A, To-247, Continuous Collector Current:48A, Collector Emitter Saturation Voltage:1.8V, Power Dissipation:300W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C Rohs Compliant: Yes |Littelfuse IXGH48N60B3D1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 660 |
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$4.7500 | Buy Now |
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DISTI #
3949076
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element14 Asia-Pacific | TRANSISTOR, IGBT, 600V, 48A, TO-247 RoHS: Compliant Min Qty: 1 Container: Each | 660 |
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$6.3408 / $9.9736 | Buy Now |
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DISTI #
3949076
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Farnell | TRANSISTOR, IGBT, 600V, 48A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 25 Weeks, 3 Days Container: Each | 660 |
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$6.0067 / $10.5773 | Buy Now |
Part Details for IXGH48N60B3D1
IXGH48N60B3D1 CAD Models
IXGH48N60B3D1 Part Data Attributes
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IXGH48N60B3D1
Littelfuse Inc
Buy Now
Datasheet
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IXGH48N60B3D1
Littelfuse Inc
Insulated Gate Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | TO-247, 3 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 48 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 200 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 400 ns | |
| Turn-off Time-Nom (toff) | 246 ns | |
| Turn-on Time-Nom (ton) | 47 ns | |
| VCEsat-Max | 1.8 V |
Alternate Parts for IXGH48N60B3D1
This table gives cross-reference parts and alternative options found for IXGH48N60B3D1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXGH48N60B3D1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SGP13N60UF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IXGH48N60B3D1 vs SGP13N60UF |
| HGTP12N60A4 | Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB ALTERNATE VERSION, 3 PIN | Fairchild Semiconductor Corporation | IXGH48N60B3D1 vs HGTP12N60A4 |
| HGT1S12N60C3DR | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel | Harris Semiconductor | IXGH48N60B3D1 vs HGT1S12N60C3DR |
| HGTP12N60C3 | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, | Fairchild Semiconductor Corporation | IXGH48N60B3D1 vs HGTP12N60C3 |
| HGT1S3N60C3D | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-262AA | Harris Semiconductor | IXGH48N60B3D1 vs HGT1S3N60C3D |
| HGTG20N100D2 | Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247 | Harris Semiconductor | IXGH48N60B3D1 vs HGTG20N100D2 |
| HGT1S12N60A4DS9A | Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB | Fairchild Semiconductor Corporation | IXGH48N60B3D1 vs HGT1S12N60A4DS9A |
| IRG4PC30W | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | IXGH48N60B3D1 vs IRG4PC30W |
| IRG4PC30KDPBF | Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | IXGH48N60B3D1 vs IRG4PC30KDPBF |
| FGH40N6S2D | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN | Fairchild Semiconductor Corporation | IXGH48N60B3D1 vs FGH40N6S2D |