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Overview of IXGK55N120A3H1 by Littelfuse Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for IXGK55N120A3H1 by Littelfuse Inc
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
03AH1127
|
Newark | Disc Igbt Pt-Low Frequency To-264(3)/ Tube |Littelfuse IXGK55N120A3H1 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$20.4600 | Buy Now |
CAD Models for IXGK55N120A3H1 by Littelfuse Inc
Part Data Attributes for IXGK55N120A3H1 by Littelfuse Inc
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
LITTELFUSE INC
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
LITTELFUSE
|
|
Additional Feature
|
LOW CONDUCTION LOSS
|
|
Case Connection
|
COLLECTOR
|
|
Collector Current-Max (IC)
|
125 A
|
|
Collector-Emitter Voltage-Max
|
1200 V
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
Gate-Emitter Thr Voltage-Max
|
5 V
|
|
Gate-Emitter Voltage-Max
|
20 V
|
|
JEDEC-95 Code
|
TO-264AA
|
|
JESD-30 Code
|
R-PSFM-T3
|
|
JESD-609 Code
|
e1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Temperature-Max
|
150 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
460 W
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
10
|
|
Transistor Application
|
POWER CONTROL
|
|
Transistor Element Material
|
SILICON
|
|
Turn-off Time-Nom (toff)
|
1253 ns
|
|
Turn-on Time-Nom (ton)
|
70 ns
|
|
VCEsat-Max
|
2.3 V
|
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