Datasheets
IXGP42N30C3 by:

Insulated Gate Bipolar Transistor, 250A I(C), 300V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

Part Details for IXGP42N30C3 by IXYS Corporation

Overview of IXGP42N30C3 by IXYS Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXGP42N30C3

Part # Distributor Description Stock Price Buy
DISTI # IXGP42N30C3-ND
DigiKey IGBT 300V 223W TO220AB Lead time: 27 Weeks Container: Tube Temporarily Out of Stock
Buy Now
DISTI # 747-IXGP42N30C3
Mouser Electronics IGBT Transistors 42 Amps 300V RoHS: Compliant 0
Order Now
DISTI # IXGP42N30C3
TME Transistor: IGBT, GenX3™, 300V, 42A, 223W, TO220-3 Min Qty: 1 0
  • 1 $2.3800
  • 3 $2.1400
  • 10 $1.8900
  • 50 $1.7000
$1.7000 / $2.3800 RFQ

Part Details for IXGP42N30C3

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IXGP42N30C3 Part Data Attributes:

IXGP42N30C3 IXYS Corporation
Buy Now Datasheet
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IXGP42N30C3 IXYS Corporation Insulated Gate Bipolar Transistor, 250A I(C), 300V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 250 A
Collector-Emitter Voltage-Max 300 V
Configuration SINGLE
Fall Time-Max (tf) 120 ns
Gate-Emitter Thr Voltage-Max 5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 223 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 229 ns
Turn-on Time-Nom (ton) 43 ns

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