Datasheets
IXGP4N100 by:

Insulated Gate Bipolar Transistor, 8A I(C), 1000V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN

Part Details for IXGP4N100 by Littelfuse Inc

Overview of IXGP4N100 by Littelfuse Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for IXGP4N100

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IXGP4N100 Part Data Attributes

IXGP4N100 Littelfuse Inc
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IXGP4N100 Littelfuse Inc Insulated Gate Bipolar Transistor, 8A I(C), 1000V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer LITTELFUSE INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 8 A
Collector-Emitter Voltage-Max 1000 V
Configuration SINGLE
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1220 ns
Turn-on Time-Nom (ton) 45 ns

Alternate Parts for IXGP4N100

This table gives cross-reference parts and alternative options found for IXGP4N100. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXGP4N100, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTP20N60C3R Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB Harris Semiconductor IXGP4N100 vs HGTP20N60C3R
SGW6N60UFD Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, D2PAK-3 Samsung Semiconductor IXGP4N100 vs SGW6N60UFD
SGP5N60RUFD Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN Samsung Semiconductor IXGP4N100 vs SGP5N60RUFD
HGT1S12N60B3S9A Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation IXGP4N100 vs HGT1S12N60B3S9A
HGT1S3N60B3S Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation IXGP4N100 vs HGT1S3N60B3S
APT45GL100BN 45A, 1000V, N-CHANNEL IGBT, TO-247 Microsemi Corporation IXGP4N100 vs APT45GL100BN
IXDA20N120AS Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 IXYS Corporation IXGP4N100 vs IXDA20N120AS
SGW15N120 Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN Infineon Technologies AG IXGP4N100 vs SGW15N120
HGTG18N120BN_NL Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation IXGP4N100 vs HGTG18N120BN_NL
IXSH30N60B Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IXGP4N100 vs IXSH30N60B

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