Part Details for IXGR60N60C3C1 by Littelfuse Inc
Overview of IXGR60N60C3C1 by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IXGR60N60C3C1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH1171
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Newark | Disc Igbt Pt-Hifrequency Isoplus247/Tube |Littelfuse IXGR60N60C3C1 Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
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Part Details for IXGR60N60C3C1
IXGR60N60C3C1 CAD Models
IXGR60N60C3C1 Part Data Attributes:
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IXGR60N60C3C1
Littelfuse Inc
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Datasheet
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IXGR60N60C3C1
Littelfuse Inc
Insulated Gate Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 75 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 5.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 170 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 198 ns | |
| Turn-on Time-Nom (ton) | 62 ns | |
| VCEsat-Max | 2.5 V |