Datasheets
IXGT28N120B by:

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 PIN

Part Details for IXGT28N120B by IXYS Corporation

Overview of IXGT28N120B by IXYS Corporation

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for IXGT28N120B

Part # Distributor Description Stock Price Buy
DISTI # IXGT28N120B-ND
DigiKey IGBT PT 1200V 50A TO268AA Lead time: 25 Weeks Container: Box Temporarily Out of Stock
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Part Details for IXGT28N120B

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IXGT28N120B Part Data Attributes:

IXGT28N120B IXYS Corporation
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IXGT28N120B IXYS Corporation Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-268AA
Package Description TO-268, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 50 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
Fall Time-Max (tf) 320 ns
Gate-Emitter Thr Voltage-Max 5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-268AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 590 ns
Turn-on Time-Nom (ton) 63 ns

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