Datasheets
IXGT6N170A-TRL by:

Insulated Gate Bipolar Transistor,

Part Details for IXGT6N170A-TRL by IXYS Corporation

Overview of IXGT6N170A-TRL by IXYS Corporation

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Applications Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

Price & Stock for IXGT6N170A-TRL

Part # Distributor Description Stock Price Buy
DISTI # 238-IXGT6N170A-TRLTR-ND
DigiKey IGBT 1700V 6A TO268 Min Qty: 400 Lead time: 25 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 400 $11.5936
  • 800 $10.8456
$10.8456 / $11.5936 Buy Now
DISTI # 747-IXGT6N170A-TRL
Mouser Electronics IGBT Transistors IXGT6N170A TRL RoHS: Compliant 0
  • 400 $11.6000
$11.6000 Order Now
Future Electronics IXGT6N170 Series 1700 V 6 A Surface Mount High Voltage IGBT Transistor - TO-268 RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 400 Container: Reel 0
Reel
  • 400 $11.0400
$11.0400 Buy Now
DISTI # IXGT6N170A-TRL
TTI IGBT Transistors IXGT6N170A TRL Min Qty: 400 Package Multiple: 400 Container: Reel Americas - 0
  • 400 $10.0200
  • 800 $9.8200
  • 1,600 $9.6300
  • 2,400 $9.4400
  • 4,000 $9.2600
$9.2600 / $10.0200 Buy Now

Part Details for IXGT6N170A-TRL

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IXGT6N170A-TRL Part Data Attributes

IXGT6N170A-TRL IXYS Corporation
Buy Now Datasheet
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IXGT6N170A-TRL IXYS Corporation Insulated Gate Bipolar Transistor,
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description TO-268, 3/2 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 6 A
Collector-Emitter Voltage-Max 1700 V
Configuration SINGLE
Fall Time-Max (tf) 65 ns
Gate-Emitter Thr Voltage-Max 5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-268AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -50 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 75 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 465 ns
Turn-off Time-Nom (toff) 252 ns
Turn-on Time-Nom (ton) 86 ns
VCEsat-Max 7 V

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