Datasheets
IXGT6N170A by:

Insulated Gate Bipolar Transistor, 6A I(C), 1700V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 PIN

Part Details for IXGT6N170A by Littelfuse Inc

Results Overview of IXGT6N170A by Littelfuse Inc

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Applications Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

IXGT6N170A Information

IXGT6N170A by Littelfuse Inc is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXGT6N170A

Part # Distributor Description Stock Price Buy
DISTI # 03AH1192
Newark Disc Igbt Npt-Hi Voltage To-268Aa/ Tube |Littelfuse IXGT6N170A RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $8.3000
  • 500 $7.7100
$7.7100 / $8.3000 Buy Now

Part Details for IXGT6N170A

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IXGT6N170A Part Data Attributes

IXGT6N170A Littelfuse Inc
Buy Now Datasheet
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IXGT6N170A Littelfuse Inc Insulated Gate Bipolar Transistor, 6A I(C), 1700V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Package Description TO-268, 3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Case Connection COLLECTOR
Collector Current-Max (IC) 6 A
Collector-Emitter Voltage-Max 1700 V
Configuration SINGLE
Fall Time-Max (tf) 65 ns
Gate-Emitter Thr Voltage-Max 5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-268AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 75 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 271 ns
Turn-on Time-Nom (ton) 91 ns

IXGT6N170A Related Parts

IXGT6N170A Frequently Asked Questions (FAQ)

  • The maximum junction temperature for the IXGT6N170A is 150°C. However, it's recommended to operate the device at a temperature below 125°C for optimal performance and reliability.

  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 250W for the IXGT6N170A.

  • The recommended gate drive voltage for the IXGT6N170A is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.

  • Yes, the IXGT6N170A can be used in a parallel configuration to increase the current handling capability. However, it's crucial to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.

  • The recommended storage temperature for the IXGT6N170A is between -40°C and 125°C. It's essential to store the device within this temperature range to prevent damage or degradation.

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