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Transistors IGBTs IXGX55N120A3D1

IXGX55N120A3D1
Description: Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel,

Overview of IXGX55N120A3D1 by IXYS Corporation

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  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for IXGX55N120A3D1 by IXYS Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 747-IXGX55N120A3D1
Mouser Electronics IGBT Transistors IGBT RoHS: Compliant 0
  • 1 $15.9100
  • 10 $14.0200
  • 30 $13.6400
  • 60 $12.8700
  • 120 $12.1100
  • 270 $11.7300
  • 510 $10.9800
$10.9800 / $15.9100 Order Now

CAD Models for IXGX55N120A3D1 by IXYS Corporation
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Part Data Attributes for IXGX55N120A3D1 by IXYS Corporation
Parametric Data

IXGX55N120A3D1
IXYS Corporation
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
IXYS CORP
Package Description
,
Reach Compliance Code
compliant
ECCN Code
EAR99
Collector Current-Max (IC)
125 A
Collector-Emitter Voltage-Max
1200 V
Gate-Emitter Thr Voltage-Max
5 V
Gate-Emitter Voltage-Max
20 V
Operating Temperature-Max
150 °C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
460 W
Surface Mount
NO
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  1. IXGX55N120A3D1
    IXYS Corporation
    Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel,
    VS

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