Part Details for IXTA05N100 by Littelfuse Inc
Overview of IXTA05N100 by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IXTA05N100
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1242
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Newark | Discmosfet N-Ch Std-Hivoltage To-263D2/ Tube |Littelfuse IXTA05N100 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$2.3800 / $3.1800 | Buy Now |
DISTI #
IXTA05N100-ND
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DigiKey | MOSFET N-CH 1000V 750MA TO263 Min Qty: 300 Lead time: 57 Weeks Container: Tube | Temporarily Out of Stock |
|
$3.0678 | Buy Now |
Part Details for IXTA05N100
IXTA05N100 CAD Models
IXTA05N100 Part Data Attributes
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IXTA05N100
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTA05N100
Littelfuse Inc
Power Field-Effect Transistor,
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Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | , | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1000 V | |
Drain Current-Max (ID) | 0.75 A | |
Drain-source On Resistance-Max | 17 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 8 pF | |
JEDEC-95 Code | TO-263AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 40 W | |
Pulsed Drain Current-Max (IDM) | 3 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXTA05N100
This table gives cross-reference parts and alternative options found for IXTA05N100. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA05N100, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXTA05N100HVTRL | Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN | IXYS Corporation | IXTA05N100 vs IXTA05N100HVTRL |
IXTU05N100 | Power Field-Effect Transistor, | Littelfuse Inc | IXTA05N100 vs IXTU05N100 |
IXTY05N100 | Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3 | IXYS Corporation | IXTA05N100 vs IXTY05N100 |
IXTP05N100 | Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IXYS Corporation | IXTA05N100 vs IXTP05N100 |
IXTP05N100 | Power Field-Effect Transistor, | Littelfuse Inc | IXTA05N100 vs IXTP05N100 |
IXTY05N100 | Power Field-Effect Transistor, | Littelfuse Inc | IXTA05N100 vs IXTY05N100 |
IXTA05N100HV | Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN | IXYS Corporation | IXTA05N100 vs IXTA05N100HV |