Part Details for IXTA10P50P by IXYS Corporation
Results Overview of IXTA10P50P by IXYS Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXTA10P50P Information
IXTA10P50P by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTA10P50P
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
3438402
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Farnell | MOSFET, P-CH, 500V, 10A, TO-263AA RoHS: Compliant Min Qty: 1 Lead time: 50 Weeks, 1 Days Container: Each | 303 |
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$3.8547 / $6.6764 | Buy Now |
DISTI #
IXTA10P50P
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TME | Transistor: P-MOSFET, PolarP™, unipolar, -500V, -10A, 300W, TO263 Min Qty: 1 | 154 |
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$3.7200 / $5.9200 | Buy Now |
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LCSC | TO-263AA MOSFETs ROHS | 6 |
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$4.9088 / $6.8498 | Buy Now |
Part Details for IXTA10P50P
IXTA10P50P CAD Models
IXTA10P50P Part Data Attributes
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IXTA10P50P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTA10P50P
IXYS Corporation
Power Field-Effect Transistor, 10A I(D), 500V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | D2PAK | |
Package Description | PLASTIC, TO-263, 3 PIN | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXTA10P50P
This table gives cross-reference parts and alternative options found for IXTA10P50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA10P50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IXTQ10P50P | IXYS Corporation | $2.8004 | Power Field-Effect Transistor, 10A I(D), 500V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN | IXTA10P50P vs IXTQ10P50P |
IXTP10P50P | IXYS Corporation | $3.9115 | Power Field-Effect Transistor, 10A I(D), 500V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXTA10P50P vs IXTP10P50P |
IXTH10P50P | IXYS Corporation | $5.0006 | Power Field-Effect Transistor, 10A I(D), 500V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXTA10P50P vs IXTH10P50P |
IXTQ10P50P | Littelfuse Inc | $5.1838 | Power Field-Effect Transistor, | IXTA10P50P vs IXTQ10P50P |
IXTA10P50P | Littelfuse Inc | $5.5799 | Power Field-Effect Transistor, | IXTA10P50P vs IXTA10P50P |
IXTH10P50P | Littelfuse Inc | $5.3036 | Power Field-Effect Transistor, | IXTA10P50P vs IXTH10P50P |