Datasheets
IXTA10P50P by:

Power Field-Effect Transistor, 10A I(D), 500V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

Part Details for IXTA10P50P by IXYS Corporation

Results Overview of IXTA10P50P by IXYS Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IXTA10P50P Information

IXTA10P50P by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXTA10P50P

Part # Distributor Description Stock Price Buy
DISTI # 3438402
Farnell MOSFET, P-CH, 500V, 10A, TO-263AA RoHS: Compliant Min Qty: 1 Lead time: 50 Weeks, 1 Days Container: Each 303
  • 1 $6.6764
  • 5 $5.7442
  • 10 $4.7995
  • 50 $3.8799
  • 100 $3.8673
  • 250 $3.8547
$3.8547 / $6.6764 Buy Now
DISTI # IXTA10P50P
TME Transistor: P-MOSFET, PolarP™, unipolar, -500V, -10A, 300W, TO263 Min Qty: 1 154
  • 1 $5.9200
  • 10 $4.9800
  • 50 $4.2300
  • 100 $3.9000
  • 250 $3.7200
$3.7200 / $5.9200 Buy Now
LCSC TO-263AA MOSFETs ROHS 6
  • 1 $6.8498
  • 10 $5.9341
  • 50 $5.3760
  • 100 $4.9088
$4.9088 / $6.8498 Buy Now

Part Details for IXTA10P50P

IXTA10P50P CAD Models

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IXTA10P50P Part Data Attributes

IXTA10P50P IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXTA10P50P IXYS Corporation Power Field-Effect Transistor, 10A I(D), 500V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code D2PAK
Package Description PLASTIC, TO-263, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTA10P50P

This table gives cross-reference parts and alternative options found for IXTA10P50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA10P50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IXTQ10P50P IXYS Corporation $2.8004 Power Field-Effect Transistor, 10A I(D), 500V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN IXTA10P50P vs IXTQ10P50P
IXTP10P50P IXYS Corporation $3.9115 Power Field-Effect Transistor, 10A I(D), 500V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN IXTA10P50P vs IXTP10P50P
IXTH10P50P IXYS Corporation $5.0006 Power Field-Effect Transistor, 10A I(D), 500V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXTA10P50P vs IXTH10P50P
IXTQ10P50P Littelfuse Inc $5.1838 Power Field-Effect Transistor, IXTA10P50P vs IXTQ10P50P
IXTA10P50P Littelfuse Inc $5.5799 Power Field-Effect Transistor, IXTA10P50P vs IXTA10P50P
IXTH10P50P Littelfuse Inc $5.3036 Power Field-Effect Transistor, IXTA10P50P vs IXTH10P50P

IXTA10P50P Related Parts

IXTA10P50P Frequently Asked Questions (FAQ)

  • The maximum operating frequency of the IXTA10P50P is typically up to 100 kHz, but it can be used at higher frequencies with proper thermal management and derating.

  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. The heat sink should be attached using a thermal interface material with a thermal conductivity of at least 1 W/m-K.

  • The recommended gate drive voltage for the IXTA10P50P is between 10V and 15V, with a gate current of up to 2A. A gate drive voltage of 12V is a good starting point for most applications.

  • Yes, the IXTA10P50P can be used in a bridge configuration, but it requires careful consideration of the device's thermal and electrical characteristics. A bridge configuration can help to reduce the overall power losses and increase the system's efficiency.

  • The maximum allowed voltage imbalance between the two switches in a half-bridge configuration is typically ±10% of the maximum rated voltage. Exceeding this limit can lead to uneven current sharing and reduced system reliability.

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