Datasheets
IXTA170N075T2 by:

Power Field-Effect Transistor, 170A I(D), 75V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

Part Details for IXTA170N075T2 by IXYS Corporation

Overview of IXTA170N075T2 by IXYS Corporation

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Applications Energy and Power Systems Renewable Energy

Price & Stock for IXTA170N075T2

Part # Distributor Description Stock Price Buy
DISTI # IXTA170N075T2-ND
DigiKey MOSFET N-CH 75V 170A TO263 Min Qty: 300 Lead time: 27 Weeks Container: Tube Temporarily Out of Stock
  • 300 $2.6076
$2.6076 Buy Now
DISTI # 747-IXTA170N075T2
Mouser Electronics MOSFET 170 Amps 75V 0
  • 1 $4.0600
  • 10 $3.4100
  • 50 $3.2200
  • 100 $2.7600
  • 250 $2.6000
  • 500 $2.4500
$2.4500 / $4.0600 Order Now
Future Electronics N-Channel 75 V 170 A 5.4 mΩ Surface Mount TrenchT2 Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $2.6400
  • 150 $2.5700
  • 250 $2.5400
  • 1,000 $2.4600
  • 1,500 $2.4100
$2.4100 / $2.6400 Buy Now
DISTI # IXTA170N075T2
TTI MOSFET 170 Amps 75V Min Qty: 300 Package Multiple: 50 Container: Tube Americas - 0
  • 300 $2.1600
  • 500 $2.1200
  • 1,000 $2.0800
  • 1,500 $2.0400
$2.0400 / $2.1600 Buy Now
DISTI # IXTA170N075T2
TME Transistor: N-MOSFET, unipolar, 75V, 170A, 360W, TO263, 63ns Min Qty: 1 0
  • 1 $3.3200
  • 3 $2.9900
  • 10 $2.6300
  • 50 $2.3800
$2.3800 / $3.3200 RFQ

Part Details for IXTA170N075T2

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IXTA170N075T2 Part Data Attributes

IXTA170N075T2 IXYS Corporation
Buy Now Datasheet
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IXTA170N075T2 IXYS Corporation Power Field-Effect Transistor, 170A I(D), 75V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code D2PAK
Package Description TO-263, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 600 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 170 A
Drain-source On Resistance-Max 0.0054 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 360 W
Pulsed Drain Current-Max (IDM) 510 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTA170N075T2

This table gives cross-reference parts and alternative options found for IXTA170N075T2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA170N075T2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTP170N075T2 Power Field-Effect Transistor, Littelfuse Inc IXTA170N075T2 vs IXTP170N075T2
IXFK180N07 Power Field-Effect Transistor, 180A I(D), 70V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN IXYS Corporation IXTA170N075T2 vs IXFK180N07

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