Part Details for IXTA170N075T2 by IXYS Corporation
Overview of IXTA170N075T2 by IXYS Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IXTA170N075T2
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXTA170N075T2-ND
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DigiKey | MOSFET N-CH 75V 170A TO263 Min Qty: 300 Lead time: 27 Weeks Container: Tube | Temporarily Out of Stock |
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$2.6076 | Buy Now |
DISTI #
747-IXTA170N075T2
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Mouser Electronics | MOSFET 170 Amps 75V | 0 |
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$2.4500 / $4.0600 | Order Now |
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Future Electronics | N-Channel 75 V 170 A 5.4 mΩ Surface Mount TrenchT2 Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Container: Tube | 0Tube |
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$2.4100 / $2.6400 | Buy Now |
DISTI #
IXTA170N075T2
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TTI | MOSFET 170 Amps 75V Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
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$2.0400 / $2.1600 | Buy Now |
DISTI #
IXTA170N075T2
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TME | Transistor: N-MOSFET, unipolar, 75V, 170A, 360W, TO263, 63ns Min Qty: 1 | 0 |
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$2.3800 / $3.3200 | RFQ |
Part Details for IXTA170N075T2
IXTA170N075T2 CAD Models
IXTA170N075T2 Part Data Attributes
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IXTA170N075T2
IXYS Corporation
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Datasheet
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Compare Parts:
IXTA170N075T2
IXYS Corporation
Power Field-Effect Transistor, 170A I(D), 75V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | D2PAK | |
Package Description | TO-263, 3 PIN | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 600 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 170 A | |
Drain-source On Resistance-Max | 0.0054 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 360 W | |
Pulsed Drain Current-Max (IDM) | 510 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXTA170N075T2
This table gives cross-reference parts and alternative options found for IXTA170N075T2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA170N075T2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IXTP170N075T2 | Power Field-Effect Transistor, | Littelfuse Inc | IXTA170N075T2 vs IXTP170N075T2 |
IXFK180N07 | Power Field-Effect Transistor, 180A I(D), 70V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | IXYS Corporation | IXTA170N075T2 vs IXFK180N07 |