Part Details for IXTA1N120P-TRL by IXYS Corporation
Overview of IXTA1N120P-TRL by IXYS Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXTA1N120P-TRL
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTA1N120P-TRL
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Mouser Electronics | MOSFET IXTA1N120P TRL RoHS: Compliant | 0 |
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$3.0800 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 24 Weeks Container: Reel | 0Reel |
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$2.7900 | Buy Now |
DISTI #
IXTA1N120P-TRL
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TTI | MOSFET IXTA1N120P TRL Min Qty: 800 Package Multiple: 800 Container: Reel | Americas - 0 |
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$2.4800 / $2.6000 | Buy Now |
Part Details for IXTA1N120P-TRL
IXTA1N120P-TRL CAD Models
IXTA1N120P-TRL Part Data Attributes
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IXTA1N120P-TRL
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTA1N120P-TRL
IXYS Corporation
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Package Description | TO-263, 3/2 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 1 A | |
Drain-source On Resistance-Max | 20 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5.4 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 63 W | |
Pulsed Drain Current-Max (IDM) | 1.8 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |