Datasheets
IXTA24P085T by:

Power Field-Effect Transistor, 24A I(D), 85V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

Part Details for IXTA24P085T by IXYS Corporation

Overview of IXTA24P085T by IXYS Corporation

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Price & Stock for IXTA24P085T

Part # Distributor Description Stock Price Buy
DISTI # 747-IXTA24P085T
Mouser Electronics MOSFETs 24 Amps 85V 0.065 Rds RoHS: Compliant 515
  • 1 $2.7100
  • 10 $2.4700
  • 50 $2.1400
  • 100 $1.8400
  • 250 $1.7800
  • 500 $1.6300
  • 1,000 $1.3200
  • 2,500 $1.3100
  • 5,000 $1.2600
$1.2600 / $2.7100 Buy Now
Future Electronics Single P-Channel 85 V 65 mOhm 83 W Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Lead time: 44 Weeks Container: Tube 0
Tube
  • 50 $1.4000
  • 200 $1.3600
  • 500 $1.3300
  • 1,250 $1.3100
  • 2,000 $1.2700
$1.2700 / $1.4000 Buy Now
DISTI # IXTA24P085T
TTI MOSFETs 24 Amps 85V 0.065 Rds Min Qty: 50 Package Multiple: 50 Container: Tube Americas - 150
In Stock
  • 50 $1.7400
  • 100 $1.5700
  • 250 $1.5200
  • 500 $1.4500
  • 1,000 $1.3200
  • 2,000 $1.2900
  • 5,000 $1.2700
$1.2700 / $1.7400 Buy Now
DISTI # IXTA24P085T
TME Transistor: P-MOSFET, TrenchP™, unipolar, -85V, -24A, 83W, TO263 Min Qty: 1 0
  • 1 $2.3000
  • 3 $2.0500
  • 10 $1.8300
  • 50 $1.6500
$1.6500 / $2.3000 RFQ

Part Details for IXTA24P085T

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IXTA24P085T Part Data Attributes

IXTA24P085T IXYS Corporation
Buy Now Datasheet
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IXTA24P085T IXYS Corporation Power Field-Effect Transistor, 24A I(D), 85V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code D2PAK
Package Description PLASTIC, TO-263, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 85 V
Drain Current-Max (ID) 24 A
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 83 W
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTA24P085T

This table gives cross-reference parts and alternative options found for IXTA24P085T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA24P085T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTP24P085T Power Field-Effect Transistor, 24A I(D), 85V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN IXYS Corporation IXTA24P085T vs IXTP24P085T

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