Part Details for IXTA2R4N120P by Littelfuse Inc
Overview of IXTA2R4N120P by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTA2R4N120P
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1318
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Newark | Mosfet, N-Ch, 1.2Kv, 2.4A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:1.2Kv, Continuous Drain Current Id:2.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Littelfuse IXTA2R4N120P RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 19 |
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$3.5000 / $6.6000 | Buy Now |
DISTI #
IXTA2R4N120P-ND
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DigiKey | MOSFET N-CH 1200V 2.4A TO263 Min Qty: 1 Lead time: 57 Weeks Container: Tube | Temporarily Out of Stock |
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$3.5763 / $6.7300 | Buy Now |
Part Details for IXTA2R4N120P
IXTA2R4N120P CAD Models
IXTA2R4N120P Part Data Attributes
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IXTA2R4N120P
Littelfuse Inc
Buy Now
Datasheet
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IXTA2R4N120P
Littelfuse Inc
Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 200 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 2.4 A | |
Drain-source On Resistance-Max | 7.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 6 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXTA2R4N120P
This table gives cross-reference parts and alternative options found for IXTA2R4N120P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA2R4N120P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXTP2R4N120P | Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXYS Corporation | IXTA2R4N120P vs IXTP2R4N120P |
IXTH2R4N120P | Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | Littelfuse Inc | IXTA2R4N120P vs IXTH2R4N120P |
IXTH2R4N120P | Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN | IXYS Corporation | IXTA2R4N120P vs IXTH2R4N120P |