Datasheets
IXTA3N100D2 by:

Power Field-Effect Transistor, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3

Part Details for IXTA3N100D2 by IXYS Corporation

Overview of IXTA3N100D2 by IXYS Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXTA3N100D2

Part # Distributor Description Stock Price Buy
DISTI # 747-IXTA3N100D2
Mouser Electronics MOSFET N-CH MOSFETS (D2) 1000V 3A RoHS: Compliant 300
  • 1 $6.1500
  • 10 $5.2700
  • 50 $4.7700
  • 100 $4.3800
  • 250 $3.7900
  • 500 $3.6700
  • 1,000 $3.2600
$3.2600 / $6.1500 Buy Now
Future Electronics MOSFET N-CH MOSFETS (D2) 1000V 3A RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $3.9000
  • 150 $3.7900
  • 250 $3.7400
  • 500 $3.6800
  • 1,000 $3.5800
$3.5800 / $3.9000 Buy Now
Future Electronics MOSFET N-CH MOSFETS (D2) 1000V 3A RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 300 Container: Cut Tape/Mini-Reel 0
Cut Tape/Mini-Reel
  • 1 $4.2900
  • 5 $4.0800
  • 25 $3.8700
  • 50 $3.7900
  • 150 $3.5800
$3.5800 / $4.2900 Buy Now
DISTI # IXTA3N100D2
TME Transistor: N-MOSFET, unipolar, 1kV, 3A, 125W, TO263, 17ns Min Qty: 1 0
  • 1 $4.6500
  • 3 $4.1800
  • 10 $3.7000
  • 50 $3.3200
$3.3200 / $4.6500 RFQ
DISTI # SMC-IXTA3N100D2
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 362
RFQ

Part Details for IXTA3N100D2

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IXTA3N100D2 Part Data Attributes

IXTA3N100D2 IXYS Corporation
Buy Now Datasheet
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IXTA3N100D2 IXYS Corporation Power Field-Effect Transistor, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code D2PAK
Package Description PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max 5.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

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