Part Details for IXTA3N100P by IXYS Corporation
Overview of IXTA3N100P by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXTA3N100P
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
747-IXTA3N100P
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Mouser Electronics | MOSFETs 3 Amps 1000V 4.8 Rds | 0 |
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$3.0200 / $4.7100 | Order Now |
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Future Electronics | N-Channel 1000 V 3 A 4.8 Ω Surface Mount PolarVHV Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Container: Tube | 0Tube |
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$2.5500 / $2.8000 | Buy Now |
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DISTI #
IXTA3N100P
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TTI | MOSFETs 3 Amps 1000V 4.8 Rds Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
|
$2.6000 / $2.7600 | Buy Now |
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DISTI #
IXTA3N100P
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TME | Transistor: N-MOSFET, unipolar, 1kV, 3A, 125W, TO263, 820ns Min Qty: 1 | 0 |
|
$2.8500 / $3.9900 | RFQ |
Part Details for IXTA3N100P
IXTA3N100P CAD Models
IXTA3N100P Part Data Attributes
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IXTA3N100P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTA3N100P
IXYS Corporation
Power Field-Effect Transistor, 3A I(D), 1000V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | D2PAK | |
| Package Description | TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 4.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTA3N100P
This table gives cross-reference parts and alternative options found for IXTA3N100P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA3N100P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTP3N100P | Power Field-Effect Transistor, 3A I(D), 1000V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Littelfuse Inc | IXTA3N100P vs IXTP3N100P |
| IXTP3N100P | Power Field-Effect Transistor, 3A I(D), 1000V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXYS Corporation | IXTA3N100P vs IXTP3N100P |
| BUK456-1000B,127 | 3.1A, 1000V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | NXP Semiconductors | IXTA3N100P vs BUK456-1000B,127 |
| IXTH3N100P | Power Field-Effect Transistor, 3A I(D), 1000V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN | IXYS Corporation | IXTA3N100P vs IXTH3N100P |
| BUK436W-1000B,127 | 3.1A, 1000V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | NXP Semiconductors | IXTA3N100P vs BUK436W-1000B,127 |
| IXTA3N100P | Power Field-Effect Transistor, 3A I(D), 1000V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | IXTA3N100P vs IXTA3N100P |
| BUK436W-1000B127 | TRANSISTOR 3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, FET General Purpose Power | NXP Semiconductors | IXTA3N100P vs BUK436W-1000B127 |