Part Details for IXTA3N120 by IXYS Corporation
Overview of IXTA3N120 by IXYS Corporation
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTA3N120
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
71AH4567
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Newark | Mosfet, N-Ch, 1.2Kv, 3A, To-263Aa Rohs Compliant: Yes |Ixys Semiconductor IXTA3N120 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$5.3200 / $8.4400 | Buy Now |
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DISTI #
IXTA3N120-ND
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DigiKey | MOSFET N-CH 1200V 3A TO263 Min Qty: 1 Lead time: 57 Weeks Container: Tube | Temporarily Out of Stock |
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$4.3183 / $8.1200 | Buy Now |
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DISTI #
747-IXTA3N120
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Mouser Electronics | MOSFET 3 Amps 1200V 4.5 Rds RoHS: Compliant | 0 |
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$6.4900 / $8.2100 | Order Now |
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Future Electronics | Single N-Channel 1200 V 4.5 Ohm 200 W Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Container: Tube | 0Tube |
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$5.0300 / $5.1400 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR | 121 |
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$5.9916 / $9.7161 | Buy Now |
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DISTI #
IXTA3N120
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TTI | MOSFET 3 Amps 1200V 4.5 Rds Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
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$5.6300 | Buy Now |
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|
Chip 1 Exchange | INSTOCK | 10 |
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RFQ | |
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Chip1Cloud | High Voltage Power MOSFETs | MOSFET N-CH 1.2KV 3A TO-263 | 3000 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 45 |
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$3.5000 / $5.3800 | Buy Now |
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DISTI #
3438407
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element14 Asia-Pacific | MOSFET, N-CH, 1.2KV, 3A, TO-263AA RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$5.6692 / $8.4225 | Buy Now |
Part Details for IXTA3N120
IXTA3N120 CAD Models
IXTA3N120 Part Data Attributes:
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IXTA3N120
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTA3N120
IXYS Corporation
Power Field-Effect Transistor, 3A I(D), 1200V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | D2PAK | |
| Package Description | PLASTIC, TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 700 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 4.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTA3N120
This table gives cross-reference parts and alternative options found for IXTA3N120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA3N120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTA3N110 | Power Field-Effect Transistor, 3A I(D), 1100V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | IXYS Corporation | IXTA3N120 vs IXTA3N110 |