Part Details for IXTA4N80P by IXYS Corporation
Overview of IXTA4N80P by IXYS Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTA4N80P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXTA4N80P-ND
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DigiKey | MOSFET N-CH 800V 3.6A TO263 Min Qty: 300 Lead time: 46 Weeks Container: Tube | Temporarily Out of Stock |
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$1.7240 | Buy Now |
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DISTI #
747-IXTA4N80P
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Mouser Electronics | MOSFET 3.5 Amps 800V 3 Rds | 0 |
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$1.2500 / $2.6800 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 0Tube |
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$1.3700 | Buy Now |
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DISTI #
IXTA4N80P
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TTI | MOSFET 3.5 Amps 800V 3 Rds Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
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$1.2900 / $1.7000 | Buy Now |
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DISTI #
IXTA4N80P
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TME | Transistor: N-MOSFET, PolarHV™, unipolar, 800V, 3.6A, Idm: 8A, 100W Min Qty: 1 | 0 |
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$1.5700 / $2.1900 | RFQ |
Part Details for IXTA4N80P
IXTA4N80P CAD Models
IXTA4N80P Part Data Attributes
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IXTA4N80P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTA4N80P
IXYS Corporation
Power Field-Effect Transistor, 3.6A I(D), 800V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | D2PAK | |
| Package Description | TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 3.6 A | |
| Drain-source On Resistance-Max | 3.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTA4N80P
This table gives cross-reference parts and alternative options found for IXTA4N80P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA4N80P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFA3N80 | Power Field-Effect Transistor, 3.6A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 3 PIN | Littelfuse Inc | IXTA4N80P vs IXFA3N80 |
| IXTP4N80P | Power Field-Effect Transistor, 3.6A I(D), 800V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Littelfuse Inc | IXTA4N80P vs IXTP4N80P |
| STB4NB80T4 | 4A, 800V, 3.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | STMicroelectronics | IXTA4N80P vs STB4NB80T4 |
| IXFA3N80 | Power Field-Effect Transistor, 3.6A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 3 PIN | IXYS Corporation | IXTA4N80P vs IXFA3N80 |
| BUK436W-800A,127 | 4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | NXP Semiconductors | IXTA4N80P vs BUK436W-800A,127 |
| STB4NB80FPT4 | 4A, 800V, 3.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | STMicroelectronics | IXTA4N80P vs STB4NB80FPT4 |
| BUK456-800A127 | TRANSISTOR 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | IXTA4N80P vs BUK456-800A127 |