Datasheets
IXTA62N15P by:

Power Field-Effect Transistor, 62A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

Part Details for IXTA62N15P by Littelfuse Inc

Overview of IXTA62N15P by Littelfuse Inc

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Price & Stock for IXTA62N15P

Part # Distributor Description Stock Price Buy
DISTI # 03AH1408
Newark Mosfet, N-Ch, 150V, 62A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:62A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5.5V Rohs Compliant: Yes |Littelfuse IXTA62N15P Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 58
  • 1 $1.9200
  • 10 $1.9200
  • 25 $1.9200
  • 50 $1.9200
  • 100 $1.9200
  • 500 $1.9200
  • 1,000 $1.9200
  • 2,500 $1.9200
$1.9200 Buy Now
DISTI # IXTA62N15P-ND
DigiKey MOSFET N-CH 150V 62A TO263 Min Qty: 1 Lead time: 44 Weeks Container: Tube 272
In Stock
  • 1 $4.9400
  • 50 $3.9160
  • 100 $3.3566
  • 500 $2.9836
  • 1,000 $2.5547
  • 2,000 $2.4055
$2.4055 / $4.9400 Buy Now

Part Details for IXTA62N15P

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IXTA62N15P Part Data Attributes:

IXTA62N15P Littelfuse Inc
Buy Now Datasheet
Compare Parts:
IXTA62N15P Littelfuse Inc Power Field-Effect Transistor, 62A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 62 A
Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 150 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTA62N15P

This table gives cross-reference parts and alternative options found for IXTA62N15P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA62N15P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTP62N15P Power Field-Effect Transistor, 62A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Littelfuse Inc IXTA62N15P vs IXTP62N15P
2SK3592-01S Power Field-Effect Transistor, 57A I(D), 150V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3 Fuji Electric Co Ltd IXTA62N15P vs 2SK3592-01S
2SK3592-01SJ Power Field-Effect Transistor, 57A I(D), 150V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Fuji Electric Co Ltd IXTA62N15P vs 2SK3592-01SJ
IXTQ62N15P Power Field-Effect Transistor, 62A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Littelfuse Inc IXTA62N15P vs IXTQ62N15P

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