Part Details for IXTA6N100D2 by Littelfuse Inc
Overview of IXTA6N100D2 by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Space Technology
Industrial Automation
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Aerospace and Defense
Healthcare
Renewable Energy
Electronic Manufacturing
Communication and Networking
Robotics and Drones
Price & Stock for IXTA6N100D2
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1399
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Newark | Mosfet, N-Ch, 1Kv, 6A, To-263 Aa, Channel Type:N Channel, Drain Source Voltage Vds:1Kv, Continuous Drain Current Id:6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:0V, Gate Source Threshold Voltage Max:-, Product Range:- Rohs Compliant: Yes |Littelfuse IXTA6N100D2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$4.8800 / $9.1700 | Buy Now |
DISTI #
IXTA6N100D2-ND
|
DigiKey | MOSFET N-CH 1000V 6A TO263 Min Qty: 1 Lead time: 57 Weeks Container: Tube |
488 In Stock |
|
$4.9764 / $9.3600 | Buy Now |
Part Details for IXTA6N100D2
IXTA6N100D2 CAD Models
IXTA6N100D2 Part Data Attributes
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IXTA6N100D2
Littelfuse Inc
Buy Now
Datasheet
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IXTA6N100D2
Littelfuse Inc
Power Field-Effect Transistor,
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | , | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Drain-source On Resistance-Max | 2.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 41 pF | |
JEDEC-95 Code | TO-263AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |