Part Details for IXTA94N20X4 by IXYS Corporation
Overview of IXTA94N20X4 by IXYS Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IXTA94N20X4
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTA94N20X4
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Mouser Electronics | MOSFET MSFT 94A 200V X4 RoHS: Compliant | 836 |
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$7.2500 / $8.6600 | Buy Now |
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Future Electronics | Discrete MOSFET 94A 200V X4 TO263 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Bulk | 0Bulk |
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$7.6800 / $8.0700 | Buy Now |
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DISTI #
IXTA94N20X4
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TTI | MOSFET MSFT 94A 200V X4 Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 550 In Stock |
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$7.2600 | Buy Now |
Part Details for IXTA94N20X4
IXTA94N20X4 CAD Models
IXTA94N20X4 Part Data Attributes:
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IXTA94N20X4
IXYS Corporation
Buy Now
Datasheet
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IXTA94N20X4
IXYS Corporation
Power Field-Effect Transistor, 94A I(D), 200V, 0.0106ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 94 A | |
| Drain-source On Resistance-Max | 0.0106 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 4 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 360 W | |
| Pulsed Drain Current-Max (IDM) | 220 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |