Part Details for IXTB30N100L by IXYS Corporation
Overview of IXTB30N100L by IXYS Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTB30N100L
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXTB30N100L-ND
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DigiKey | MOSFET N-CH 1000V 30A PLUS264 Min Qty: 300 Lead time: 57 Weeks Container: Tube | Temporarily Out of Stock |
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$51.8171 | Buy Now |
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DISTI #
747-IXTB30N100L
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Mouser Electronics | MOSFET 30 Amps 1000V RoHS: Compliant | 0 |
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$52.5000 | Order Now |
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Future Electronics | DiscMosfet N-CH Linear Std TO-264(3) RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 25 Container: Tube | 0Tube |
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$53.4700 / $54.2600 | Buy Now |
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DISTI #
IXTB30N100L
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TTI | MOSFET 30 Amps 1000V Min Qty: 300 Package Multiple: 25 Container: Tube | Americas - 0 |
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$51.0100 | Buy Now |
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DISTI #
IXTB30N100L
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TME | Transistor: N-MOSFET, unipolar, 1kV, 30A, 800W, PLUS264™, 1us Min Qty: 1 | 0 |
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$62.4000 / $87.3200 | RFQ |
Part Details for IXTB30N100L
IXTB30N100L CAD Models
IXTB30N100L Part Data Attributes
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IXTB30N100L
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTB30N100L
IXYS Corporation
Power Field-Effect Transistor, 30A I(D), 1000V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS264, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | PLASTIC, PLUS264, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.45 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 800 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTB30N100L
This table gives cross-reference parts and alternative options found for IXTB30N100L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTB30N100L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT10030L2VRG | Power Field-Effect Transistor, 33A I(D), 1000V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN | Microsemi Corporation | IXTB30N100L vs APT10030L2VRG |
| IXTN30N100L | Power Field-Effect Transistor, 30A I(D), 1000V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | IXYS Corporation | IXTB30N100L vs IXTN30N100L |
| IXFK30N100Q2 | Power Field-Effect Transistor, 30A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Littelfuse Inc | IXTB30N100L vs IXFK30N100Q2 |
| APT29F100B2 | Power Field-Effect Transistor, 30A I(D), 1000V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXTB30N100L vs APT29F100B2 |
| APT10030L2VFRG | Power Field-Effect Transistor, 33A I(D), 1000V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN | Microsemi Corporation | IXTB30N100L vs APT10030L2VFRG |
| APT29F100B2 | Power Field-Effect Transistor, 30A I(D), 1000V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, T-MAX, 3 PIN | Microsemi Corporation | IXTB30N100L vs APT29F100B2 |
| APT31M100B2 | Power Field-Effect Transistor, 32A I(D), 1000V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXTB30N100L vs APT31M100B2 |
| IXFX32N90P | Power Field-Effect Transistor, 32A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | Littelfuse Inc | IXTB30N100L vs IXFX32N90P |
| APT29F100L | Power Field-Effect Transistor, 30A I(D), 1000V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | Microchip Technology Inc | IXTB30N100L vs APT29F100L |
| IXFX32N100Q3 | Power Field-Effect Transistor, | Littelfuse Inc | IXTB30N100L vs IXFX32N100Q3 |