Part Details for IXTH120N20X4 by Littelfuse Inc
Overview of IXTH120N20X4 by Littelfuse Inc
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Price & Stock for IXTH120N20X4
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
27AK2245
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Newark | Discrete Mosfet 120A 200V X4 To247/ Tube |Littelfuse IXTH120N20X4 Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$5.4700 / $5.8900 | Buy Now |
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DISTI #
5656-IXTH120N20X4-ND
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DigiKey | MOSFET Min Qty: 1 Lead time: 32 Weeks Container: Tube |
300 In Stock |
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$5.6877 / $10.0300 | Buy Now |
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|
Ozdisan Elektronik | MOSFET DIS.120A 200V N-CH TO247 X4 THT | 0 |
|
$10.9436 / $11.7096 | RFQ |
Part Details for IXTH120N20X4
IXTH120N20X4 CAD Models
IXTH120N20X4 Part Data Attributes:
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IXTH120N20X4
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTH120N20X4
Littelfuse Inc
Power Field-Effect Transistor, 120A I(D), 200V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0095 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1.8 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 417 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |