Part Details for IXTH130N20T by IXYS Corporation
Overview of IXTH130N20T by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTH130N20T
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
747-IXTH130N20T
|
Mouser Electronics | MOSFET 130Amps 200V RoHS: Compliant | 572 |
|
$4.7900 / $9.0200 | Buy Now |
|
|
Future Electronics | 200V, 130A, 16mohm, N-Channel, Trench Power Mosfet, TO-247 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Lead time: 27 Weeks Container: Tube | 0Tube |
|
$4.8500 / $5.3300 | Buy Now |
|
DISTI #
IXTH130N20T
|
TTI | MOSFET 130Amps 200V Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
|
$4.7400 / $5.1400 | Buy Now |
|
DISTI #
IXTH130N20T
|
TME | Transistor: N-MOSFET, Trench™, unipolar, 200V, 75A, Idm: 320A, 830W Min Qty: 1 | 0 |
|
$5.9600 / $8.3400 | RFQ |
|
|
New Advantage Corporation | MOSFET DIS.130A 200V N-CH TO247AD TRENCH RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 749 |
|
$11.1800 / $11.9700 | Buy Now |
Part Details for IXTH130N20T
IXTH130N20T CAD Models
IXTH130N20T Part Data Attributes
|
|
IXTH130N20T
IXYS Corporation
Buy Now
Datasheet
|
Compare Parts:
IXTH130N20T
IXYS Corporation
Power Field-Effect Transistor, 130A I(D), 200V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | PLASTIC, TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 130 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |