Part Details for IXTH36N50P by IXYS Corporation
Overview of IXTH36N50P by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for IXTH36N50P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58M7650
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Newark | Mosfet, N Channel, 500V, 36A, To-247Ad, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:36A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Msl:- Rohs Compliant: Yes |Ixys Semiconductor IXTH36N50P Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$7.2800 / $10.8300 | Buy Now |
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DISTI #
747-IXTH36N50P
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Mouser Electronics | MOSFET 36.0 Amps 500 V 0.17 Ohm Rds RoHS: Compliant | 0 |
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$8.3200 / $10.5400 | Order Now |
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Future Electronics | Single N-Channel 500 V 170 mOhm 540 W Power Mosfet - TO-247 AD RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Lead time: 44 Weeks Container: Tube | 0Tube |
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$6.1500 / $6.3000 | Buy Now |
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DISTI #
IXTH36N50P
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TTI | MOSFET 36.0 Amps 500 V 0.17 Ohm Rds Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$5.9100 / $6.5000 | Buy Now |
Part Details for IXTH36N50P
IXTH36N50P CAD Models
IXTH36N50P Part Data Attributes
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IXTH36N50P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTH36N50P
IXYS Corporation
Power Field-Effect Transistor, 36A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | TO-247AD, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 36 A | |
| Drain-source On Resistance-Max | 0.17 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 108 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTH36N50P
This table gives cross-reference parts and alternative options found for IXTH36N50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTH36N50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT5020BVFRG | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Microchip Technology Inc | IXTH36N50P vs APT5020BVFRG |
| 2SK4199LS | TRANSISTOR 3 A, 650 V, 3.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FI-LS, 3 PIN, FET General Purpose Power | onsemi | IXTH36N50P vs 2SK4199LS |
| 2SK1033 | Power Field-Effect Transistor, 20A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Panasonic Electronic Components | IXTH36N50P vs 2SK1033 |
| 2SK3199 | Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, FM20, 3 PIN | Sanken Electric Co Ltd | IXTH36N50P vs 2SK3199 |
| IRFW720A | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Samsung Semiconductor | IXTH36N50P vs IRFW720A |
| 2SK3823 | Power Field-Effect Transistor, 40A I(D), 60V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | SANYO Electric Co Ltd | IXTH36N50P vs 2SK3823 |
| SML50B26R3 | 26A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | TT Electronics Power and Hybrid / Semelab Limited | IXTH36N50P vs SML50B26R3 |
| 2SK766 | Power Field-Effect Transistor, 3A I(D), 500V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, TO-220F, 3 PIN | Panasonic Electronic Components | IXTH36N50P vs 2SK766 |
| 2SK1609 | Power Field-Effect Transistor, 8A I(D), 500V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Panasonic Electronic Components | IXTH36N50P vs 2SK1609 |
| 2SK3826 | Power Field-Effect Transistor, 26A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | SANYO Semiconductor Co Ltd | IXTH36N50P vs 2SK3826 |