Part Details for IXTH36P10 by IXYS Corporation
Overview of IXTH36P10 by IXYS Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IXTH36P10
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTH36P10
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Mouser Electronics | MOSFETs -36 Amps -100V 0.075 Rds RoHS: Compliant | 0 |
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$2.1800 / $3.5700 | Order Now |
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DISTI #
IXTH36P10
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TME | Transistor: P-MOSFET, unipolar, -100V, -36A, 180W, TO247-3, 180ns Min Qty: 1 | 0 |
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$2.4800 / $3.4700 | RFQ |
Part Details for IXTH36P10
IXTH36P10 CAD Models
IXTH36P10 Part Data Attributes
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IXTH36P10
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTH36P10
IXYS Corporation
Power Field-Effect Transistor, 36A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 36 A | |
| Drain-source On Resistance-Max | 0.075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 180 W | |
| Pulsed Drain Current-Max (IDM) | 144 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTH36P10
This table gives cross-reference parts and alternative options found for IXTH36P10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTH36P10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SHD225452 | Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN | Sensitron Semiconductors | IXTH36P10 vs SHD225452 |
| IRF5210 | Power Field-Effect Transistor, 40A I(D), 100V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, | TT Electronics Resistors | IXTH36P10 vs IRF5210 |
| IRF5210STRLHR | Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | IXTH36P10 vs IRF5210STRLHR |
| AUIRF5210STRL | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Infineon Technologies AG | IXTH36P10 vs AUIRF5210STRL |
| IRF5210SPBF | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | IXTH36P10 vs IRF5210SPBF |
| IRF5210L | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Infineon Technologies AG | IXTH36P10 vs IRF5210L |
| AUIRF5210STRR | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Infineon Technologies AG | IXTH36P10 vs AUIRF5210STRR |
| IRF5210PBF | Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IXTH36P10 vs IRF5210PBF |
| IRF5210 | 40A, 100V, 0.07ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | IXTH36P10 vs IRF5210 |
| IXTA52P10P | Power Field-Effect Transistor, | Littelfuse Inc | IXTH36P10 vs IXTA52P10P |