Part Details for IXTJ4N150 by IXYS Corporation
Overview of IXTJ4N150 by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for IXTJ4N150
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
747-IXTJ4N150
|
Mouser Electronics | MOSFET High Voltage Power MOSFET RoHS: Compliant | 0 |
|
$11.4600 | Order Now |
|
Future Electronics | MOSFET High Voltage Power MOSFET RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube | 0Tube |
|
$8.5700 / $8.7700 | Buy Now |
DISTI #
IXTJ4N150
|
TTI | MOSFET High Voltage Power MOSFET Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
|
$7.0700 / $7.2100 | Buy Now |
DISTI #
IXTJ4N150
|
TME | Transistor: N-MOSFET, unipolar, 1.5kV, 2.5A, 110W, ISO247™, 900ns Min Qty: 1 | 0 |
|
$7.5400 / $10.9100 | RFQ |
Part Details for IXTJ4N150
IXTJ4N150 CAD Models
IXTJ4N150 Part Data Attributes
|
IXTJ4N150
IXYS Corporation
Buy Now
Datasheet
|
Compare Parts:
IXTJ4N150
IXYS Corporation
Power Field-Effect Transistor, 2.5A I(D), 1500V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC, ISO TO-247, 3 PIN
|
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Package Description | PLASTIC, ISO TO-247, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 350 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1500 V | |
Drain Current-Max (ID) | 2.5 A | |
Drain-source On Resistance-Max | 6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 110 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |