Part Details for IXTK120P20T by IXYS Corporation
Overview of IXTK120P20T by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Price & Stock for IXTK120P20T
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
747-IXTK120P20T
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Mouser Electronics | MOSFET TrenchP Power MOSFET RoHS: Compliant | 329 |
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$24.0000 / $30.2700 | Buy Now |
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Future Electronics | N-Channel 200 V 30 mOhm Through Hole Power Mosfet - TO-264 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 25 Container: Tube | 0Tube |
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$20.6000 / $21.0300 | Buy Now |
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DISTI #
IXTK120P20T
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TTI | MOSFET TrenchP Power MOSFET Min Qty: 300 Package Multiple: 25 Container: Tube | Americas - 0 |
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$19.8000 / $21.0100 | Buy Now |
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DISTI #
IXTK120P20T
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TME | Transistor: P-MOSFET, TrenchP™, unipolar, -200V, -120A, 1040W Min Qty: 1 | 0 |
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$24.6800 / $34.2500 | RFQ |
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New Advantage Corporation | MOSFET DIS.120A 200V N-CH TO-264 TRENCHP RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 292 |
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$46.0700 / $49.3600 | Buy Now |
Part Details for IXTK120P20T
IXTK120P20T CAD Models
IXTK120P20T Part Data Attributes:
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IXTK120P20T
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTK120P20T
IXYS Corporation
Power Field-Effect Transistor, 120A I(D), 200V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-264AA | |
| Package Description | PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-264AA | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1040 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |