Datasheets
IXTK32P60P by:

Power Field-Effect Transistor, 32A I(D), 600V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

Part Details for IXTK32P60P by IXYS Corporation

Overview of IXTK32P60P by IXYS Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXTK32P60P

Part # Distributor Description Stock Price Buy
DISTI # 747-IXTK32P60P
Mouser Electronics MOSFET -32 Amps -600V 0.350 Rds RoHS: Compliant 0
  • 1 $20.6200
  • 10 $20.6100
  • 25 $17.0900
  • 100 $16.0200
$16.0200 / $20.6200 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 25 Container: Tube 0
Tube
  • 25 $15.4900
$15.4900 Buy Now
DISTI # IXTK32P60P
TTI MOSFET -32 Amps -600V 0.350 Rds Min Qty: 300 Package Multiple: 25 Container: Tube Americas - 0
  • 300 $15.0800
  • 500 $14.3200
  • 1,000 $14.0400
  • 3,000 $13.7700
$13.7700 / $15.0800 Buy Now
DISTI # IXTK32P60P
TME Transistor: P-MOSFET, PolarP™, unipolar, -600V, -32A, 890W, TO264 Min Qty: 1 0
  • 1 $23.0700
  • 3 $20.9100
  • 10 $18.3300
$18.3300 / $23.0700 RFQ

Part Details for IXTK32P60P

IXTK32P60P CAD Models

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IXTK32P60P Part Data Attributes:

IXTK32P60P IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXTK32P60P IXYS Corporation Power Field-Effect Transistor, 32A I(D), 600V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-264AA
Package Description TO-264, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 3500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 32 A
Drain-source On Resistance-Max 0.35 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-264AA
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 890 W
Pulsed Drain Current-Max (IDM) 96 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTK32P60P

This table gives cross-reference parts and alternative options found for IXTK32P60P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTK32P60P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTX32P60P Power Field-Effect Transistor, 32A I(D), 600V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN IXYS Corporation IXTK32P60P vs IXTX32P60P
IXTX32P60P Power Field-Effect Transistor, Littelfuse Inc IXTK32P60P vs IXTX32P60P
IXTK32P60P Power Field-Effect Transistor, Littelfuse Inc IXTK32P60P vs IXTK32P60P

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