Part Details for IXTK550N055T2 by IXYS Corporation
Overview of IXTK550N055T2 by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTK550N055T2
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTK550N055T2
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Mouser Electronics | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET RoHS: Compliant | 0 |
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$18.0400 | Order Now |
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Future Electronics | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 25 Container: Tube | 0Tube |
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$15.5900 / $15.9400 | Buy Now |
DISTI #
IXTK550N055T2
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TTI | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET Min Qty: 300 Package Multiple: 25 Container: Tube | Americas - 0 |
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$16.4100 | Buy Now |
DISTI #
IXTK550N055T2
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TME | Transistor: N-MOSFET, unipolar, 55V, 550A, 1250W, TO264, 100ns Min Qty: 1 | 0 |
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$18.9700 / $26.0900 | RFQ |
Part Details for IXTK550N055T2
IXTK550N055T2 CAD Models
IXTK550N055T2 Part Data Attributes:
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IXTK550N055T2
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTK550N055T2
IXYS Corporation
Power Field-Effect Transistor, 550A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-264AA | |
Package Description | PLASTIC, TO-264, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 3000 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 550 A | |
Drain-source On Resistance-Max | 0.0016 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-264AA | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1250 W | |
Pulsed Drain Current-Max (IDM) | 1375 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXTK550N055T2
This table gives cross-reference parts and alternative options found for IXTK550N055T2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTK550N055T2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IXTX550N055T2 | Power Field-Effect Transistor, 550A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | IXYS Corporation | IXTK550N055T2 vs IXTX550N055T2 |
IXTX550N055T2 | Power Field-Effect Transistor, | Littelfuse Inc | IXTK550N055T2 vs IXTX550N055T2 |