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Transistors / Power Field-Effect Transistors / IXTN102N65X2
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IXTN102N65X2 by:

Power Field-Effect Transistor,

Part Details for IXTN102N65X2 by Littelfuse Inc

Overview of IXTN102N65X2 by Littelfuse Inc

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Part Details for IXTN102N65X2

IXTN102N65X2 Part Data Attributes

Parametric Data
IXTN102N65X2 Littelfuse Inc
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IXTN102N65X2 Littelfuse Inc Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Package Description SOT-227, 4 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 3000 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 76 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 12.6 pF
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 595 W
Pulsed Drain Current-Max (IDM) 204 A
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

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