Datasheets
IXTN32P60P by:

Power Field-Effect Transistor, 32A I(D), 600V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4

Part Details for IXTN32P60P by IXYS Corporation

Overview of IXTN32P60P by IXYS Corporation

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Price & Stock for IXTN32P60P

Part # Distributor Description Stock Price Buy
DISTI # 747-IXTN32P60P
Mouser Electronics Discrete Semiconductor Modules -32 Amps -600V 0.350 Rds RoHS: Compliant 77
  • 1 $37.7200
  • 10 $33.5200
  • 20 $31.2700
  • 50 $30.3000
  • 100 $29.3200
  • 200 $27.3600
$27.3600 / $37.7200 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tube 0
Tube
  • 10 $28.3500
$28.3500 Buy Now
DISTI # IXTN32P60P
TTI Discrete Semiconductor Modules -32 Amps -600V 0.350 Rds Min Qty: 300 Package Multiple: 10 Container: Tube Americas - 0
  • 300 $25.4400
$25.4400 Buy Now
DISTI # IXTN32P60P
TME Module, single transistor, -600V, -32A, SOT227B, screw, Idm: -96A Min Qty: 1 0
  • 1 $43.0300
  • 3 $38.7100
  • 10 $34.1900
$34.1900 / $43.0300 RFQ

Part Details for IXTN32P60P

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IXTN32P60P Part Data Attributes:

IXTN32P60P IXYS Corporation
Buy Now Datasheet
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IXTN32P60P IXYS Corporation Power Field-Effect Transistor, 32A I(D), 600V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description PLASTIC, MINIBLOC-4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 3500 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 32 A
Drain-source On Resistance-Max 0.35 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 890 W
Pulsed Drain Current-Max (IDM) 96 A
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish Nickel (Ni)
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

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