Part Details for IXTN40P50P by IXYS Corporation
Overview of IXTN40P50P by IXYS Corporation
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXTN40P50P
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTN40P50P
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Mouser Electronics | Discrete Semiconductor Modules -40.0 Amps -500V 0.230 Rds RoHS: Compliant | 228 |
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$27.0900 / $37.7300 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Lead time: 24 Weeks Container: Tube | 0Tube |
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$28.3500 | Buy Now |
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Bristol Electronics | Min Qty: 1 | 41 |
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$24.3672 / $26.4000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR | 1 |
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$28.6000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR | 32 |
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$38.5560 / $45.3600 | Buy Now |
DISTI #
IXTN40P50P
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TTI | Discrete Semiconductor Modules -40.0 Amps -500V 0.230 Rds Min Qty: 300 Package Multiple: 10 Container: Tube | Americas - 0 |
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$25.7800 / $26.8200 | Buy Now |
DISTI #
IXTN40P50P
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TME | Module, single transistor, -500V, -40A, SOT227B, screw, Idm: -120A Min Qty: 1 | 0 |
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$30.1200 / $35.5500 | RFQ |
Part Details for IXTN40P50P
IXTN40P50P CAD Models
IXTN40P50P Part Data Attributes
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IXTN40P50P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTN40P50P
IXYS Corporation
Power Field-Effect Transistor, 40A I(D), 500V, 0.23ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Package Description | PLASTIC, MINIBLOC-4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 3500 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.23 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 890 W | |
Pulsed Drain Current-Max (IDM) | 120 A | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Finish | Nickel (Ni) | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |